| PART |
Description |
Maker |
| BS62LV8005 BS62LV8005BC BS62LV8005BI BS62LV8005EC |
DDR-II, 25-Bit 1:1 or 14-Bit 1:2 Configurable Registered Buffer
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| HY5DU561622DTP HY5DU561622DLTP HY5DU561622DLTP-K H |
DDR SDRAM - 256Mb
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)
|
HYNIX[Hynix Semiconductor]
|
| ASM4SSTVF16859 ASM4SSTVF16859-64TT ASM4SSTVF16859- |
DDR 13-Bit to 26-Bit Registered Buffer
Specialty Clock Management
CONNECTOR ACCESSORY
|
Alliance Semiconductor Corp...
ALSC[Alliance Semiconductor Corporation]
|
| ICSSSTV32852YHT |
DDR 24-Bit to 48-Bit Registered Buffer 复员24位到48位注册缓冲区
|
Electronic Theatre Controls, Inc.
|
| ICS16859 ICSSSTV16859YG-T ICSSSTV16859YGLF-T |
SSTV SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, TRUE OUTPUT, PDSO64 6.10 MM, 0.50 MM PITCH, TSSOP-64
DDR 13-Bit to 26-Bit Registered Buffer
|
Integrated Device Technology, Inc.
Integrated Circuit Systems
|
| M368L1713CTL-LB3 M368L1713CTL M368L1713CTL-CA2 M36 |
128MB DDR SDRAM MODULE (16Mx64 based on 16Mx8 DDR SDRAM) Unbuffered 184pin DIMM 64-bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| UPD44324092BF5-E33-FQ1 UPD44324182BF5-E33-FQ1 PD44 |
4M X 9 DDR SRAM, 0.45 ns, PBGA165
2M X 18 DDR SRAM, 0.45 ns, PBGA165
36M-BIT DDR II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| ICS83841BHT ICS83841 ICS83841BH ICS83841BHLF ICS83 |
20 BIT, DDR SDRAM 2:1 MUX
|
Integrated Circuit Syst...
ICST[Integrated Circuit Systems]
|
| W97AH6KB |
Four-bit prefetch DDR architecture
|
Winbond
|
| ASM4SSTVF16857-48TR ASM4SSTVF16857-48TT ASM4SSTVF1 |
2.3 V -2.7 V, DDR 14-bit registered buffer
|
Alliance Semiconductor
|
| AD7548 AD7548AQ AD7548BQ AD7548JN AD7548JP AD7548J |
LC2MOS 8-BIT uP COMPATIBLE 12-BIT DAC PARALLEL, WORD INPUT LOADING, 1.5 us SETTLING TIME, 8-BIT DAC, PDIP20
12-Bit, Multiplying, I<SUB>OUT</SUB> DAC, 8-Bit Bus
|
Analog Devices, Inc.
|
